GT60J322 Datasheet, Toshiba Semiconductor

GT60J322 igbt equivalent, silicon n-channel igbt.

GT60J322

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GT60J322 Datasheet

Application

Unit: mm
*
* Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (.

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Toshiba Semiconductor

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Toshiba (https://www.toshiba.com/) Semiconductor

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