GT40G121 Datasheet, Toshiba Semiconductor

GT40G121 igbt equivalent, silicon n-channel igbt.

GT40G121

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GT40G121 Datasheet

Application

Unit: mm
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* Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (s.

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Toshiba Semiconductor

Manufacturer

Toshiba (https://www.toshiba.com/) Semiconductor

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