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DSF07S30U - Silicon Epitaxial Schottky Barrier Type Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF07S30U DSF07S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 700 ＊ 5 125 −55 to 125 V mA A °C °C *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
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