TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
35
30
4
100
20
400
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
Collector-base time constant
Noise figure
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 2 V, IC = 0
hFE
VCE = 12 V, IC = 2 mA
(Note)
VCE (sat)
VBE (sat)
fT
Cre
Cc･rbb’
NF
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 10 V, IC = 2 mA
VCE = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IE = -1 mA, f = 30 MHz
VCE = 10 V, IE = -1 mA, f = 1 MHz,
Rg = 50 W
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 1.0 mA
40 ¾ 240
¾ ¾ 0.4 V
¾ ¾ 1.0 V
80 120 ¾ MHz
¾ 2.2 3.0 pF
¾ 30 50 ps
¾ 2.0 3.5 dB
1 2003-03-24
