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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications Driver Stage Amplifier Applications
2SC5174
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1932
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1 A
Base current
IB 0.1 A
Collector power dissipation Junction temperature Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in temperature, etc.
C5174 Datasheet
