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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 12 A
Base current
IB 2 A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.
C3710A Datasheet
