C3665 Datasheet | Toshiba

2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications Unit: mm - plementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 1000 150 - 55 to 150 Unit V V V m A m A m W °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO h FE (Note) VCE (sat) VBE f T Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 m A, IB = 0 IE = 1 m A, IC = 0 VCE = 5 V, IC = 100 m A IC = 500 m A, IB = 50 m A VCE = 5 V, IC = 500 m A VCE = 5 V, IC = 100 m A VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.2 g (typ.) Min ― ― 120 5 80 ― ― ― ― Typ. ― ― ― ― ― ― ― 120 ― Max 100 100 ― ― 240 1.0 1.0 ― 30 Unit n A n A V V V V MHz p F Note: h FE classification O: 80 to 160, Y: 120 to 240 Marking Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2004-07-07 Free Datasheet http://../ 2SC3665 - VCE 1000 mon emitter 800 15 Ta = 25°C 1000 500 300 h FE - IC mon emitter (m...