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Toshiba Electronic Components Datasheet

C3665 Datasheet

2SC3665

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications
Driver-Stage Amplifier Applications
2SC3665
Unit: mm
Complementary to 2SA1425.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
120
120
5
800
80
1000
150
55 to 150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
fT VCE = 5 V, IC = 100 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C3665
Part No. (or abbreviation code)
Characteristics
indicator
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
120
V
5 ―― V
80 240
― ― 1.0 V
― ― 1.0 V
120 MHz
― ― 30 pF
2004-07-07
Free Datasheet http://www.datasheet4u.com/


Toshiba Electronic Components Datasheet

C3665 Datasheet

2SC3665

No Preview Available !

1000
800
600
400
200
0
0
IC – VCE
15
10
Common emitter
Ta = 25°C
7
5
4
3
2
IB = 1 mA
0
2 4 6 8 10 12
Collector-emitter voltage VCE (V)
14
2SC3665
1000
500
300
100
50
20
3
hFE – IC
Common emitter
VCE = 5 V
Ta = 100°C
25
25
10 30 100 300
Collector current IC (mA)
1000
VCE (sat) – IC
0.5
Common emitter
0.3 IC/IB = 10
Ta = 100°C
0.1
25
0.05
25
0.03
0.01
3
10 30 100 300
Collector current IC (mA)
1000
PC – Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC – VBE
800
Common emitter
VCE = 5 V
600
400
Ta = 100°C
25 25
200
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
Safe Operating Area
5
3
IC max (pulsed)*
1 IC max (continuous)
1 ms*
10 ms*
0.5 100 ms*
0.3
DC operation
Ta = 25°C
0.1
0.05
0.03
0.01
*: Single nonrepetitive pulse
0.005
Ta = 25°C
0.003
Curves must be derated linearly
with increase in temperature.
0.001
0.3 1 3 10 30
100 300
Collector-emitter voltage VCE (V)
1000
2 2004-07-07
Free Datasheet http://www.datasheet4u.com/


Part Number C3665
Description 2SC3665
Maker Toshiba Semiconductor
PDF Download

C3665 Datasheet PDF






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