A1430 Datasheet - Toshiba Semiconductor

A1430 2SA1430

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Charact.

A1430-ToshibaSemiconductor.pdf (133.14 KB)