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3SK207 - Silicon N Channel Dual Gate MOS Type FET

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Part number 3SK207
Manufacturer Toshiba
File Size 180.85 KB
Description Silicon N Channel Dual Gate MOS Type FET
Datasheet download datasheet 3SK207 Datasheet

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3SK207 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK207 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.
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