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2SK4015
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4015
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.
2SK4015 Datasheet
