2SK3767 - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

Part number	2SK3767
Manufacturer	Toshiba
File Size	408.47 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK3767 Datasheet

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Other Datasheets by Toshiba

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www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.