The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3742
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
www.DataSheet4U.com
2SK3742
Unit: mm
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 5 15 45 595 5 4.
2SK3742 Datasheet
