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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications Analog Switch Applications
• 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package
Marking
Equivalent Circuit
2SK1830
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
20 10 50 100 150 −55 to 150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SK1830 Datasheet
