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2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSII.5)
2SK1359
DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
High forward transfer admittance : |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 k ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
1000 1000 ±30
5 15 125 150 −55~150
V V V
A
W °C °C
1. GATE 2. DRAIN (HEAT SINK) 3.
2SK1359 Datasheet
