2SK1359
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
- MOSII.5)
DC- DC Converter and Motor Drive Applications
Low drain- source ON resistance : RDS (ON) = 3.0 Ω (typ.)
High forward transfer admittance : |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 m A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 k ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
1000 1000 ±30
5 15 125 150
- 55~150
W °C °C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may...
