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2SJ315 - P-Channel MOSFET

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Toshiba Semiconductor

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2SJ315 P-Channel MOSFET by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – 2SJ315

Datasheet Details

Part number	2SJ315
Manufacturer	Toshiba Semiconductor
File Size	219.28 KB
Description	P-Channel MOSFET
Datasheet	2SJ315 Datasheet
Additional preview pages of the 2SJ315 datasheet.

Product details

Features

z 4.
Volt gate drive z Low drain.
source ON resistance : RDS (ON) = 0.25 Ω (typ. ) z High forward transfer admittance : |Yfs| = 3.0 S (typ. ) z Low leakage current : IDSS =.
100 µA (max) (VDS =.
60 V) z Enhancement mode : Vth =.
0.8~.
2.0 V (VDS =.
10 V, ID =.
1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain.
source voltage Drain.
gate voltage (RGS = 20 kΩ) Gate.
source volt.

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Published: Mar 30, 2005 |