2SJ315 Datasheet Toshiba Semiconductor

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z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) z .

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