2SJ200
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) ...
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SJ202 | NEC | P-Channel MOSFET |
| 2SJ204 | NEC | P-Channel MOSFET |
| 2SJ205 | NEC | P-Channel MOSFET |
| 2SJ206 | NEC | P-Channel MOSFET |
| 2SJ207 | NEC | P-Channel MOSFET |
| 2SJ208 | NEC | P-Channel MOSFET |
| 2SJ207 | Kexin Semiconductor | P-Channel MOSFET |
| 2SJ204 | Freescale Semiconductor | P-Channel Logic Level MOSFET |
| 2SJ203-T1B-A | VBsemi | 60V P-Channel MOSFET |
| 2SJ203 | Kexin Semiconductor | P-Channel MOSFET |