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Toshiba Electronic Components Datasheet

2SD2599 Datasheet

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

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2SD2599
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2599
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage
: VCBO = 1500 V
l Low Saturation Voltage : VCE (sat) = 8 V (Max.)
l High Speed
: tf = 0.5 µs (Typ.)
l Bult-in Damper Type
l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1500
600
5
3.5
7
1
40
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
EmitterBase Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
SYMBOL
TEST CONDITION
ICBO
IEBO
V (BR) EBO
hFE
VCE (sat)
VBE (sat)
VF
fT
Cob
tstg
tf
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 300 mA, IC = 0
VCE = 5 V, IC = 0.5 A
IC = 3 A, IB = 0.8 A
IC = 3 A, IB = 0.8 A
IF = 3.5 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 3 A, IB1 (end) = 0.8 A
fH = 15.75 kHz
1
MIN TYP. MAX UNIT
――
1 mA
66 200 mA
5 ―― V
8 25
5 8 V
0.9 1.5 V
1.5 2.0 V
3 MHz
55 pF
7.5 10
µs
0.5 1.0
2001-08-20


Toshiba Electronic Components Datasheet

2SD2599 Datasheet

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

No Preview Available !

2SD2599
2 2001-08-20


Part Number 2SD2599
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Maker Toshiba Semiconductor
Total Page 4 Pages
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