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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
2SD2353
Unit: mm
• High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
IC
3 A
Pulse ICP 6
Base current
IB 0.6 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2 W
25
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.
2SD2353 Datasheet
