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2SC6087 Datasheet - Toshiba Semiconductor

2SC6087 Silicon NPN Transistor

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VC.

2SC6087_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC6087

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

209.22 KB

Description:

Silicon npn transistor.

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2SC6087 2SC6087 Silicon NPN Transistor Toshiba Semiconductor

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