TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6087
2SC6087
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)（IC = 1A）
High-speed switching: tstg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
160
160
80
7
2.5
5.0
1.0
1.3
150
−55～150
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
1 : BASE
2 : COLLECTOR
3 : EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight:0.55g(typ)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
www.DataSheet4U.craotmings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2007-06-07
