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2SC6087 - Silicon NPN Transistor

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Part number 2SC6087
Manufacturer Toshiba Semiconductor
File Size 209.22 KB
Description Silicon NPN Transistor
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2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 7 2.5 5.0 1.0 1.3 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR 3 : EMITTER JEDEC JEITA TOSHIBA Weight:0.55g(typ) ― ― 2-8M1A Note: Using continuously under heavy loads (e.g.
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