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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications Switching and Muting Switch Application
2SC5232
Unit: mm
• Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA
• Large collector current: IC = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 15 V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
12 V 5V 500 mA 50 mA
Collector power dissipation Junction temperature Storage temperature range
PC 150 mW
Tj 125 °C
Tstg
−55 to 125
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g.