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2SC5172
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5172
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications
Unit: mm
• •
Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) at IC = 2 A High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I mbol VCBO VCEO VEBO
C CP 7
Rating 600 400 7 5
Unit V V V A
IB PC Tj Tstg
2A 2.0 25 150 −55 to 150 W °C °C
JEDEC JEITA TOSHIBA 2 Weight: 1.7 g (typ.
2SC5172 Datasheet
