2SA1955 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1955
Manufacturer	Toshiba
File Size	141.35 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1955 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1955 Unit: mm · Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA · Large collector current: IC = −400 mA (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -12 -5 -400 -50 100 125 -55~125 Marking Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (typ.