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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SA1313
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
• High voltage: VCEO = −50 V (min) • Complementary to 2SC3325
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−50 −50 −5 −500 −50 200 150 −55 to 150
V V V mA mA mW °C °C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.
2SA1313 Datasheet
