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Toshiba Electronic Components Datasheet

1SV239 Datasheet

Variable Capacitance Diode

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV239
1SV239
VCO for UHF Radio
Ultra low series resistance: rs = 0.44 (typ.)
Useful for small size set
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 15 V
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C2 V
C10 V
C2 V/C10 V
rs
IR = 1 μA
VR = 15 V
VR = 2 V, f = 1 MHz
VR = 10 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Marking
Min Typ. Max Unit
15 ⎯ ⎯
⎯⎯
3
3.8 4.25 4.7
1.5 1.75 2.0
2.0 2.4
0.44 0.6
V
nA
pF
pF
Ω
1 2007-11-01


Toshiba Electronic Components Datasheet

1SV239 Datasheet

Variable Capacitance Diode

No Preview Available !

1SV239
Note:
δC
=
C
(Ta) C
C (25)
(25)
× 100
(%)
2 2007-11-01


Part Number 1SV239
Description Variable Capacitance Diode
Maker Toshiba Semiconductor
Total Page 3 Pages
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1SV239 Datasheet PDF

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