1SV231 Datasheet - Toshiba Semiconductor

1SV231 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV231 CATV Tuning High capacitance ratio: C2 V/C25 V = 15 (typ.) Excellent C-V characteristics, and small tracking error. Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV231 Unit: mm Electrical Characteristics (Ta = 25°C).

1SV231_ToshibaSemiconductor.pdf