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1SV229 - Variable Capacitance Diode

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Part number 1SV229
Manufacturer Toshiba
File Size 150.77 KB
Description Variable Capacitance Diode
Datasheet download datasheet 1SV229 Datasheet

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio • Ultra low series resistance: rs = 0.2 Ω (typ.) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.