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Toshiba Electronic Components Datasheet

1SS393 Datasheet

Silicon Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS393
High Speed Switching Application
1SS393
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
100 *
1*
100 *
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
Operating temperature range
Topr
40 to 100
°C
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-2P1B
Weight: 0.006g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.54 0.60
― ― 5 μA
18 25 pF
Start of commercial production
1995-09
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS393 Datasheet

Silicon Diode

No Preview Available !

Equivalent Circuit (Top View)
Marking
1SS393
2 2014-03-01


Part Number 1SS393
Description Silicon Diode
Maker Toshiba Semiconductor
PDF Download

1SS393 Datasheet PDF






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