The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS393
High Speed Switching Application
1SS393
Unit: mm
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM
P
100 * 1*
100 *
mA A mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
―
Operating temperature range
Topr
−40 to 100
°C
JEITA
SC-70
Note: Using continuously under heavy loads (e.g.
1SS393 Datasheet
