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1SS391 - Silicon Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small package: SC-61 1SS391 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A 1. CATHODE 1 Power dissipation Junction temperature Storage temperature range Operating temperature range P 150 * mW Tj 125 °C Tstg −55 to 125 °C Topr −40 to 100 °C 2. CATHODE 2 3. ANODE 2 4. ANODE 1 JEDEC JEITA SMQ ― SC-61 Note: Using continuously under heavy loads (e.g.
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