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TC59YM916BKG40B Datasheet, Toshiba America Electronic

TC59YM916BKG40B device equivalent, 512-megabit xdrtm dram the rambus xdrtm dram device.

TC59YM916BKG40B Avg. rating / M : 1.0 rating-14

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TC59YM916BKG40B Datasheet

Features and benefits


* Highest pin bandwidth available − 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling − Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocat.

Application

including computer memory, graphics, video, and any other application where high bandwidth and low latency are required..

Description

www.DataSheet4U.com The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11…RQ0 request pins, and DQ15…DQ0/DQN15...DQN.

Image gallery

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TAGS

TC59YM916BKG40B
512-megabit
XDRTM
DRAM
The
Rambus
XDRTM
DRAM
device
TC59YM916BKG40C
TC59YM916BKG24A
TC59YM916BKG32A
Toshiba America Electronic

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