XPW6R30ANB Datasheet - Toshiba

XPW6R30ANB N-channel MOSFET

XPW6R30ANB Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPW6R30ANB DSOP Adv

XPW6R30ANB Datasheet (626.83 KB)