TV00570003CDGB Datasheet MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

Manufacturer: Toshiba

Overview: TV00570002/003CDGB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip.

Download the TV00570003CDGB datasheet PDF. This datasheet also includes the TV00570002CDGB variant, as both parts are published together in a single manufacturer document.

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TV00570003CDGB multi-chip integrated circuit silicon gate cmos by Toshiba - Datasheet Preview

Datasheet Details

Part number	TV00570003CDGB
Manufacturer	Toshiba
File Size	598.13 KB
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Download	TV00570003CDGB Download (PDF)

General Description

The TV00570002/003CDGB is a mixed multi-chip package containing a 33,554,432-bit pseudo static RAM and a 134,217,728-bit Nor Flash Memory.

The TV00570002/003CDGB is available in a 81-pin BGA package making it suitable for a variety of applications.

MCP

Key Features

Power supply voltage of 2.7 to 3.3 V Operating temperature of.
30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features.
Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increment Read operation: 24mA maximum Page Read operating : 5 mA maximum Program / Erase operating: 15 mA maximum Standby : 10 μA maximum Access time : Random : 70 ns @CL=30pF Page : 25 ns @CL=30pF Functions.

More Datasheets from Toshiba

Part Number	Description
TV00570002CDGB	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS