TV00570003CDGB
Key Features
- Power supply voltage of 2.7 to 3.3 V Operating temperature of -30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features *
- Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increment Read operation: 24mA maximum Page Read operating : 5 mA maximum Program / Erase operating: 15 mA maximum Standby : 10 μA maximum Access time : Random : 70 ns @CL=30pF Page : 25 ns @CL=30pF Functions Simultaneous Read/Write Page read Auto-Program , Auto Page Program Auto Block Erase , Auto Chip Erase Program Suspend / Resume Erase Suspend/Resume Data polling / Toggle bit Password block protection Block Protection/Boot Block Protection Automatic Sleep, supports for hidden ROM Area Common Flash Memory Interface (CFI) Block erase architecture 8 × 8 Kbytes / 127 × 64 Kbytes Bank architecture 16 Mbits × 8 Banks Boot block architecture TV00570002CDGB : top boot block TV00570003CDGB : bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 100,000 cycles typ. Pseudo SRAM Features
- Power dissipation
- Organization : 2M × 16 bits Operating : 40 mA maximum Standby : 150 μA maximum Deep power-down standby : 5 μA maximum Access time : Random / Page : 70 ns / 30 ns @CL=30pF Page read operation by 8 words Deep power-down mode : Memory cell data invalid * * * * * * * * *
- 2008-05-08 1/9
