TTB1067B - Silicon PNP Transistors

Product Overview

Toshiba

Part number	TTB1067B
Manufacturer	Toshiba
File Size	316.23 KB
Description	Silicon PNP Transistors
Datasheet	TTB1067B Datasheet
Additional preview pages of the TTB1067B datasheet.

(1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to el.

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Published: Apr 21, 2024 |