TTB1067B transistors equivalent, silicon pnp transistors.
(1) High DC current gain
: hFE = 2000 (min) (VCE = -2 V, IC = -1 A)
(2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA)
(3).
* Micromotor Drivers
* Hammer Drivers
* Switching
* Power Amplifiers
2. Features
(1) High DC current g.
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