TTB1020B Silicon PNP Transistors
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Com.
• High-Current Switching
• Hammer Drivers
2. Features
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , I.
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