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TTB1020B - Silicon PNP Transistors

Key Features

  • (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-09 2020-01-29 Rev.4.0 TTB1020B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Sym.

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Datasheet Details

Part number TTB1020B
Manufacturer Toshiba
File Size 207.04 KB
Description Silicon PNP Transistors
Datasheet download datasheet TTB1020B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B 1. Applications • High-Current Switching • Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-09 2020-01-29 Rev.4.0 TTB1020B 4.