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TTB1020B Datasheet Toshiba

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File Size : 207.04KB · TTB1020B Avg. rating / M : star-16

Features and Benefits

(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Pack.

TTB1020B TTB1020B TTB1020B
TAGS
Silicon
PNP
Transistors
TTB1020B
TTB1067B
TTB0503-1T

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