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TTB1020B Toshiba

TTB1020B Silicon PNP Transistors

TTB1020B Avg. rating / M : star-17

datasheet Download

TTB1020B Datasheet

Features and benefits

(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Com.

Application


• High-Current Switching
• Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , I.

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TTB1020B TTB1020B TTB1020B

TAGS
TTB1020B
Silicon
PNP
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TTB0503-1T
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Toshiba
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