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TTA013 Datasheet Toshiba

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Toshiba · TTA013 File Size : 302.56KB · star-11

Features and Benefits

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = .

TTA013 TTA013 TTA013
TAGS
Silicon
PNP
Epitaxial
Type
Bipolar
Transistors
TTA010
TTA011
TTA012

Stock and Price

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