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TTA013 Datasheet, Toshiba

TTA013 transistors equivalent, silicon pnp epitaxial type bipolar transistors.

TTA013 Avg. rating / M : 1.0 rating-12

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TTA013 Datasheet

Features and benefits

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (.

Application


* High-Speed Switching
* DC-DC Converters 2. Features (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC.

Image gallery

TTA013 Page 1 TTA013 Page 2 TTA013 Page 3

TAGS

TTA013
Silicon
PNP
Epitaxial
Type
Bipolar
Transistors
TTA010
TTA011
TTA012
Toshiba

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