logo

TTA013 Datasheet, Toshiba

TTA013 transistors equivalent, silicon pnp epitaxial type bipolar transistors.

TTA013 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 302.56KB)

TTA013 Datasheet

Features and benefits

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (.

Application


* High-Speed Switching
* DC-DC Converters 2. Features (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC.

Image gallery

TTA013 Page 1 TTA013 Page 2 TTA013 Page 3

TAGS

TTA013
Silicon
PNP
Epitaxial
Type
Bipolar
Transistors
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

TTA010

TTA011

TTA012

TTA014

TTA0001

TTA0002

TTA003

TTA004

TTA004B

TTA005

TTA006B

TTA007

TTA008B

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts