TTA013 Datasheet Text
Bipolar Transistors Silicon PNP Epitaxial Type
TTA013
TTA013
1. Applications
- High-Speed Switching
- DC-DC Converters
2. Features
(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A)
3. Packaging and Internal Circuit
PW-Mini
1. Base 2. Collector (Heatsink) 3. Emitter
©2022-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2022-10
2023-01-18 Rev.2.0
TTA013
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