TTA012 - Silicon PNP Epitaxial Type Bipolar Transistors

Name: TTA012
SKU: TTA012-1531221

Toshiba

The TTA012 by Toshiba is a Silicon PNP Epitaxial Type Bipolar Transistors. Below is the official datasheet preview.

Datasheet Details

Part number	TTA012
Manufacturer	Toshiba
File Size	298.82 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA012-Toshiba.pdf
Additional preview pages of the TTA012 datasheet.

(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ. ) (IC = -1.2 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA012 4. Absolute Maximum Ratings (Note) (Unless otherwise s.

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Published: Apr 29, 2024 |