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TTA012 Datasheet Toshiba

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Features and Benefits

(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 3.

TTA012 TTA012 TTA012
TAGS
Silicon
PNP
Epitaxial
Type
Bipolar
Transistors
TTA010
TTA011
TTA012

Stock and Price

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