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TTA010 - Silicon PNP Triple-Diffused Type Bipolar Transistors

Key Features

  • (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -500 V Collector-emitter voltage VCEO -500 V.

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Datasheet Details

Part number TTA010
Manufacturer Toshiba
File Size 286.00 KB
Description Silicon PNP Triple-Diffused Type Bipolar Transistors
Datasheet download datasheet TTA010 Datasheet

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Bipolar Transistors Silicon PNP Triple-Diffused Type TTA010 TTA010 1. Applications • High-Voltage Switching 2. Features (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4.