TTA010
TTA010 is Silicon PNP Triple-Diffused Type Bipolar Transistors manufactured by Toshiba.
Features
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: h FE = 100 to 300 (VCE = -10 V, IC = -20 m A) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 m A, IB = -2 m A)
3. Packaging and Internal Circuit
1. Base 2. Collector (Heatsink) 3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-500
Collector-emitter voltage
VCEO
-500
Emitter-base voltage
VEBO
-7
Collector current (DC)
(Note 1)
-100 m A
Collector current (pulsed)
(Note 1)
-200 m A
Base current
-50 m A
Collector power dissipation Junction temperature
(Note 2)
Tj
- Storage...
