TTA010 transistors equivalent, silicon pnp triple-diffused type bipolar transistors.
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sa.
* High-Voltage Switching
2. Features
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE =.
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