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TTA010 Datasheet, Toshiba

TTA010 transistors equivalent, silicon pnp triple-diffused type bipolar transistors.

TTA010 Avg. rating / M : 1.0 rating-12

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TTA010 Datasheet

Features and benefits

(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sa.

Application


* High-Voltage Switching 2. Features (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE =.

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TTA010 Page 1 TTA010 Page 2 TTA010 Page 3

TAGS

TTA010
Silicon
PNP
Triple-Diffused
Type
Bipolar
Transistors
TTA011
TTA012
TTA013
Toshiba

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