TTA008B transistors equivalent, silicon pnp epitaxial type bipolar transistors.
(1) High DC current gain
: hFE = 100 to 200 (IC = -0.5 A)
(2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A)
(3) High-speed switching
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* Power Amplifiers
* Power Switching
2. Features
(1) High DC current gain
: hFE = 100 to 200 (IC = -0.5 A)
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