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TTA006B - Silicon PNP Transistors

Features

  • (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ. ) : fT = 70 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTA006B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard t.

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Datasheet Details

Part number TTA006B
Manufacturer Toshiba
File Size 313.13 KB
Description Silicon PNP Transistors
Datasheet download datasheet TTA006B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type TTA006B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers 2. Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ.) : fT = 70 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA006B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4.
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