• Part: TTA005
  • Description: Silicon PNP Epitaxial Type Bipolar Transistors
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 203.64 KB
Download TTA005 Datasheet PDF
Toshiba
TTA005
Features (1) High DC current gain: h FE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 m A) (3) High-speed switching: tf = 55 ns (typ.) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -50 Emitter-base voltage Collector current (DC) VEBO -7 (Note 1) -5 Collector current (pulsed) (Note 1) -10 Base current Collector power dissipation (Ta = 25 ) -0.5 Collector power dissipation (Tc = 25 ) Junction temperature (Note...