TTA005 - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA005
Manufacturer	Toshiba
File Size	203.64 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA005 Datasheet
Additional preview pages of the TTA005 datasheet.

(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ. ) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltag.

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Published: Apr 29, 2024 |