TTA005 transistors equivalent, silicon pnp epitaxial type bipolar transistors.
(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed .
* High-Speed Switching
* DC-DC Converters
2. Features
(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (.
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