• Part: TTA004B
  • Description: Silicon PNP Epitaxial Type Bipolar Transistors
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 183.59 KB
Download TTA004B Datasheet PDF
Toshiba
TTA004B
TTA004B is Silicon PNP Epitaxial Type Bipolar Transistors manufactured by Toshiba.
Features (1) High collector voltage: VCEO = -160 V (min) (2) plementary to TTC004B (3) Small collector output capacitance: Cob = 17 p F (typ.) (4) High transition frequency: f T = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation Start of mercial production 2013-05 2017-01-09 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 Collector-emitter voltage VCEO -160 Emitter-base voltage VEBO -6 Collector current...