TTA004B - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA004B
Manufacturer	Toshiba
File Size	183.59 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA004B Datasheet
Additional preview pages of the TTA004B datasheet.

(1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ. ) (4) High transition frequency: fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to elec.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Oct 9, 2018 |