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TRS4V65H Datasheet, Toshiba

TRS4V65H diode equivalent, sic schottky barrier diode.

TRS4V65H Avg. rating / M : 1.0 rating-11

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TRS4V65H Datasheet

Features and benefits

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12nC (typ.) (4) Low reverse current: IR = 0.6 µA (typ..

Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

Image gallery

TRS4V65H Page 1 TRS4V65H Page 2 TRS4V65H Page 3

TAGS

TRS4V65H
SiC
Schottky
Barrier
Diode
Toshiba

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