(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V.

* Power Management Switches 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts