Datasheet4U Logo Datasheet4U.com

TPH1R712MD Datasheet - Toshiba

TPH1R712MD Silicon P-Channel MOSFET

TPH1R712MD Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Ad

TPH1R712MD Datasheet (801.05 KB)

Preview of TPH1R712MD PDF
TPH1R712MD Datasheet Preview Page 2 TPH1R712MD Datasheet Preview Page 3

Datasheet Details

Part number:

TPH1R712MD

Manufacturer:

Toshiba ↗

File Size:

801.05 KB

Description:

Silicon p-channel mosfet.

📁 Related Datasheet

TPH1R005PL Silicon N-channel MOSFET (Toshiba)

TPH1R104PB Silicon N-channel MOSFET (Toshiba)

TPH1R204PB Silicon N-channel MOSFET (Toshiba)

TPH1R204PL Silicon N-channel MOSFET (Toshiba)

TPH1R306P1 Silicon N-channel MOSFET (Toshiba)

TPH1R306PL Silicon N-channel MOSFET (Toshiba)

TPH1R403NL Silicon N-channel MOSFET (Toshiba)

TPH1R405PL Silicon N-channel MOSFET (Toshiba)

TAGS

TPH1R712MD Silicon P-Channel MOSFET Toshiba

TPH1R712MD Distributor