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TPH1R712MD Datasheet, Toshiba

TPH1R712MD mosfet equivalent, silicon p-channel mosfet.

TPH1R712MD Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 801.05KB)

TPH1R712MD Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to.

Application


* Lithium-Ion Secondary Batteries
* Power Management Switches 2. Features (1) Low drain-source on-resistance: RD.

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TPH1R712MD Page 1 TPH1R712MD Page 2 TPH1R712MD Page 3

TAGS

TPH1R712MD
Silicon
P-Channel
MOSFET
Toshiba

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