TPCP8512 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Datasheet Details

Bipolar Transistors Silicon NPN Epitaxial Type TPCP8512 TPCP8512 1.

Applications • High-Speed Switching • DC-DC Converters 2.

(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ. ) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8512 4. Absolut.