TPCP8512
TPCP8512 is Silicon NPN Transistor manufactured by Toshiba.
Features
(1) High DC current gain: h FE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 m A) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A)
3. Packaging and Internal Circuit
PS-8
1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector
©2022-2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2023-01
2023-01-16 Rev.2.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEX
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
(Note 1)
Collector current (pulsed)
(Note 1)
Base current
Collector power dissipation
(Note 2)
Collector power...
