TPCP8512 Datasheet PDF (Silicon NPN Transistor)

TPCP8512 - Silicon NPN Transistor

Features

(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ. ) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8512 4. Absolut.

Datasheet Details

Part number	TPCP8512
Manufacturer	Toshiba
File Size	342.18 KB
Description	Silicon NPN Transistor
Datasheet	TPCP8512 Datasheet
Additional preview pages of the TPCP8512 datasheet.

📁 Similar Datasheet

TPCP8510 - Silicon NPN Transistor (Toshiba Semiconductor)

TPCP8501 - MOSFET (Toshiba Semiconductor)

TPCP8504 - MOSFET (Toshiba Semiconductor)

TPCP8505 - Silicon NPN Transistor (Toshiba Semiconductor)

TPCP8507 - Silicon NPN Transistor (Toshiba Semiconductor)

TPCP8001-H - MOSFET (Toshiba Semiconductor)

TPCP8002 - MOSFET (Toshiba Semiconductor)

TPCP8003-H - MOSFET (Toshiba Semiconductor)

TPCP8004 - Silicon N-Channel MOSFET (Toshiba Semiconductor)

TPCP8005-H - Field Effect Transistor (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

Bipolar Transistors Silicon NPN Epitaxial Type TPCP8512 TPCP8512 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8512 4.

Published: Jan 30, 2024 |