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TPCP8512 - Silicon NPN Transistor

Toshiba

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Datasheet Details

Part number	TPCP8512
Manufacturer	Toshiba
File Size	342.18 KB
Description	Silicon NPN Transistor
Datasheet	TPCP8512-Toshiba.pdf

TPCP8512 Product details

Features

(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ. ) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8512 4. Absolut.

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Published: Jan 30, 2024 |