TPCA8A10-H transistor equivalent, field effect transistor.
(1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-so.
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2. Features
(1) (2) (3) (4) (5) (6) Bui.
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