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TPCA8120 Datasheet Toshiba

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Toshiba · TPCA8120 File Size : 228.93KB · 1 hits

Features and Benefits

(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCA8120 1.

TPCA8120 TPCA8120 TPCA8120
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Silicon
P-Channel
MOSFET
TPCA8120
TPCA8121
TPCA8128
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