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TMPM3HPF10BDFG - CMOS Digital Integrated Circuit Silicon Monolithic

Download the TMPM3HPF10BDFG datasheet PDF. This datasheet also includes the TMPM3HQF10BFG variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TMPM3HQF10BFG-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TMPM3HPF10BDFG
Manufacturer Toshiba
File Size 1.80 MB
Description CMOS Digital Integrated Circuit Silicon Monolithic
Datasheet download datasheet TMPM3HPF10BDFG Datasheet

General Description

● Arm® Cortex®-M3 core Operating frequency: 1 to 120 MHz Opetating voltage: 2.7 to 5.5V Code flash: 512KB to 1MB, Data flash: 32KB ● Package: 64-pin to 144-pin, 7 types of packages are available.

TXZ+ Fmaily TMPM3H Group(2) Datasheet LQFP144 (20x20 mm, 0.5 mm pitch) LQFP128 (14x14 mm, 0.4 mm pitch) LQFP100 (14x14 mm, 0.5 mm pitch) LQFP80 (12x12 mm, 0.5 mm pitch) LQFP64 (10x10 mm, 0.5 mm pitch) LQFP128 (14x20 mm, 0.5 mm pitch) QFP100 (14x20 mm, 0.65 mm pitch) Applications Widely used for consumer products and industrial products including home appliances, OA equipment, household equipment, AV devices, and motor control devices.

Overview

CMOS Digital Integrated Circuit Silicon Monolithic TMPM3H Group(2) General.

Key Features

  • Arm Cortex-M3 core ‒ Operating frequency: 1 to 120 MHz ‒ Memory Protection Unit (MPU).
  • Operating voltage and Low-power consumption operation ‒ Operating voltage: 2.7 to 5.5V ‒ Low-power consumption operation: IDLE, STOP1, STOP2.
  • Operating temperature: -40 to +105°C.
  • Internal memory ‒ Code flash: 512KB to 1MB, rewritable up to 100,000 times ‒ Data flash: 32 KB, rewritable up to 100,000 times ‒ A code flash area is rewritable in parallel with instruction execution on another c.

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