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TMM41257AZ-12 - N-channel dynamic RAM

Download the TMM41257AZ-12 datasheet PDF. This datasheet also covers the TMM41257AP-10 variant, as both devices belong to the same n-channel dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

This is advanced information and specifications are subject to change without notice.

The TMM41257AP/AT/AZ is an N-channel dynamic RAM organized 262,144 words by 1 bit.

Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as schottky TTL. In addition to the RAS-only refresh mo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMM41257AP-10-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TMM41257AZ-10 N-channel dynamic RAM
TMM41257AZ-15 N-channel dynamic RAM
TMM41257AP-10 N-channel dynamic RAM
TMM41257AP-12 N-channel dynamic RAM
TMM41257AP-15 N-channel dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA MOS MEMORY PRODUCT ~~L~~~~4~~~~I~H~CBIT DYNAMIC RAM TMM41257 APIATI AZ-l 0, TMM41257 APIATI AZ-12 N-CHANNEL SILICON GAlE CMOS TMM41257 AP/AT/AZ-15 DESCRIPTION *This is advanced information and specifications are subject to change without notice. The TMM41257AP/AT/AZ is an N-channel dynamic RAM organized 262,144 words by 1 bit. Multiplexed address inputs permit the TMM41257AP/AT/AZ to be packaged in a standard 16 pin plastic DIP, 18 pin PLCC and 16 pin ZIP. The package size allows for high system bit densities and is compatible with widely available automated testing and insertion equipment. The double layered MOS technology with polycide and poly Si permits the TMM41257AP/AT/AZ high speed operation. Also, the advanced circuit techniques have achieved low power dissipation.