TMM2015BP-15 Datasheet, Toshiba

with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode .

are required. The TMM201 5BP IS fabricated with Ion Implanted N channel silicon gate MOS technology for high performance.

The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power feature.