TMD5872-2 - Microwave Power MMIC Amplifier

Toshiba

Key Features

n n High Power P1dB=34dBm(TYP. ) High Power Added Efficiency ηadd=21%(TYP. ) n n TMD5872-2.

TMD5872-2 microwave power mmic amplifier by Toshiba - Datasheet Preview

Datasheet Details

Part number	TMD5872-2
Manufacturer	Toshiba
File Size	75.43 KB
Description	Microwave Power MMIC Amplifier
Datasheet	TMD5872-2 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TMD54HC373	(TMDx4HC37x) 3 State Octal D-Flip-Flops	Telmos
TMD54HC374	(TMDx4HC37x) 3 State Octal D-Flip-Flops	Telmos
TMD54HCT373	(TMDx4HCT37x) 3 State Octal D-Flip-Flops	Telmos
TMD54HCT374	(TMDx4HCT37x) 3 State Octal D-Flip-Flops	Telmos
TMD54X110CBB	TFT Module	Hitachi

Other Datasheets by Toshiba

Part Number	Description
TMD5872-2-321	Microwave Power MMIC Amplifier
TMD0507-2	Power GaAs MMIC
TMD0507-2A	Microwave Power GaAs MMIC
TMD1013-1-431	Microwave Power MMIC Amplifier
TMD1925-3	Microwave Power MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n High Power P1dB=34dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 oC) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) G IDD ηadd VSWRin dB A % 1.2 21 2.0:1 ±2.0 SYMBOL f P1dB CONDITION UNIT GHz dBm MIN. 5.