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TMD5872-2 - Microwave Power MMIC Amplifier

Key Features

  • n n High Power P1dB=34dBm(TYP. ) High Power Added Efficiency ηadd=21%(TYP. ) n n TMD5872-2.

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Datasheet Details

Part number TMD5872-2
Manufacturer Toshiba
File Size 75.43 KB
Description Microwave Power MMIC Amplifier
Datasheet download datasheet TMD5872-2 Datasheet

Full PDF Text Transcription for TMD5872-2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TMD5872-2. For precise diagrams, and layout, please refer to the original PDF.

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n High Power P1dB=34dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PR...

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4dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 oC) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) G IDD ηadd VSWRin dB A % 1.2 2

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