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TMD5872-2 - Microwave Power MMIC Amplifier

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Features

  • n n High Power P1dB=34dBm(TYP. ) High Power Added Efficiency ηadd=21%(TYP. ) n n TMD5872-2.

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Datasheet Details

Part number TMD5872-2
Manufacturer Toshiba
File Size 75.43 KB
Description Microwave Power MMIC Amplifier
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MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n High Power P1dB=34dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 oC) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) G IDD ηadd VSWRin dB A % 1.2 21 2.0:1 ±2.0 SYMBOL f P1dB CONDITION UNIT GHz dBm MIN. 5.
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